Carbon Nanotubes with a Memory

“Unlike similar devices that have been made, which use carbon nanotubes but can only operate at very low, very impractical temperatures, our device displays impressive long-term information retention characteristics at room temperature,” said lead researcher Jiyan Dai, a physicist at The Hong Kong Polytechnic University, to PhysOrg.com. “This indicates that mainstream carbon nanotube-based flash memory devices are a real possibility.”
Flash memory devices are currently used to store data in many types of electronic items, including digital cameras, USB memory sticks, and cell phones. Flash memory is considered a “non-volatile” form of memory, meaning it can retain data without a constant supply of power.
A typical flash memory device stores information within a grid of transistors called cells. Each cell consists of three layers: a “control gate” compound and a “floating gate” compound separated by a thin layer of an insulating oxide compound. When a voltage is applied to the cell, electrons build up as negative electric charge in the floating gate. At a certain threshold of charge, the floating gate is considered closed and the cell is thought to have a value of “0.” When the charge drops below that level, the gate is open and the cell has a value of “1.” In this way, each cell is able to hold one bit of information (there are eight bits in one byte).
Dai and co-researcher X.B. Lu created their flash memory device using carbon nanotubes as the charge-storage layer. As described in a paper in the online edition of Applied Physics Letters, they embedded the nanotubes in a compound made of the elements hafnium, aluminum, and oxygen, abbreviated HfAlO, which serves as both the control gate and the oxide layer. This carbon-nanotube “sandwich,” with each layer only several nanometers in thickness, sits on a substrate of silicon.
via http://www.physorg.com/news63291916.html
Carbon Nanotubes with a Memory

“Unlike similar devices that have been made, which use carbon nanotubes but can only operate at very low, very impractical temperatures, our device displays impressive long-term information retention characteristics at room temperature,” said lead researcher Jiyan Dai, a physicist at The Hong Kong Polytechnic University, to PhysOrg.com. “This indicates that mainstream carbon nanotube-based flash memory devices are a real possibility.”
Flash memory devices are currently used to store data in many types of electronic items, including digital cameras, USB memory sticks, and cell phones. Flash memory is considered a “non-volatile” form of memory, meaning it can retain data without a constant supply of power.
A typical flash memory device stores information within a grid of transistors called cells. Each cell consists of three layers: a “control gate” compound and a “floating gate” compound separated by a thin layer of an insulating oxide compound. When a voltage is applied to the cell, electrons build up as negative electric charge in the floating gate. At a certain threshold of charge, the floating gate is considered closed and the cell is thought to have a value of “0.” When the charge drops below that level, the gate is open and the cell has a value of “1.” In this way, each cell is able to hold one bit of information (there are eight bits in one byte).
Dai and co-researcher X.B. Lu created their flash memory device using carbon nanotubes as the charge-storage layer. As described in a paper in the online edition of Applied Physics Letters, they embedded the nanotubes in a compound made of the elements hafnium, aluminum, and oxygen, abbreviated HfAlO, which serves as both the control gate and the oxide layer. This carbon-nanotube “sandwich,” with each layer only several nanometers in thickness, sits on a substrate of silicon.
via http://www.physorg.com/news63291916.html
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